to our customers, old company name in catalogs and other documents on april 1 st , 2010, nec electronics corporation merged with renesas technology corporation, and renesas electronics corporation took over all the business of both companies. therefore, although the old company name remains in this document, it is a valid renesas electronics document. we appreciate your understanding. renesas electronics website: http://www.renesas.com april 1 st , 2010 renesas electronics corporation issued by: renesas electronics corporation (http://www.renesas.com) send any inquiries to http://www.renesas.com/inquiry.
notice 1. all information included in this document is current as of the date this document is issued. such information, however, is subject to change without any prior notice. before purchasing or using any renesas el ectronics products li sted herein, please confirm the latest product information with a renesas electronics sales office. also , please pay regular and careful attention to additional and different information to be disclosed by rene sas electronics such as that disclosed through our website. 2. renesas electronics does not assume any liability for infringeme nt of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electroni cs products or techni cal information descri bed in this document . no license, express, implied or otherwise, is granted hereby under any patents, copyri ghts or other intell ectual property right s of renesas electronics or others. 3. you should not alter, modify, copy, or otherwise misappropriate any re nesas electronics product, wh ether in whole or in part . 4. descriptions of circuits, software and other related informat ion in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully re sponsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. when exporting the products or technology described in this doc ument, you should comply with the applicable export control laws and regulations and follow the proc edures required by such laws and re gulations. you should not use renesas electronics products or the technology described in this docum ent for any purpose relating to mil itary applicati ons or use by the military, including but not l imited to the development of weapons of mass de struction. renesas electronics products and technology may not be used for or incor porated into any products or systems whose manufacture, us e, or sale is prohibited under any applicable dom estic or foreign laws or regulations. 6. renesas electronics has used reasonable care in preparing th e information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 7. renesas electronics products ar e classified according to the following three quality grades: ?standard?, ?high quality?, an d ?specific?. the recommended applications for each renesas electronics product de pends on the product?s quality grade, as indicated below. you must check the qua lity grade of each renesas electronics pr oduct before using it in a particular application. you may not use any renesas electronics produc t for any application categorized as ?speci fic? without the prior written consent of renesas electronics. further, you may not use any renesas electronics product for any application for which it is not intended without the prior written consent of renesas electronics. re nesas electronics shall not be in any way liable for any damages or losses incurred by you or third partie s arising from the use of any renesas electronics product for a n application categorized as ?specific? or for which the product is not intende d where you have failed to obtain the prior writte n consent of renesas electronics. the quality grade of each renesas electronics product is ?standard? unless otherwise expressly specified in a renesas electr onics data sheets or data books, etc. ?standard?: computers; office equipmen t; communications e quipment; test and measurement equipment; audio and visual equipment; home electronic a ppliances; machine tools; personal electronic equipmen t; and industrial robots. ?high quality?: transportation equi pment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; an ti- crime systems; safety equipment; and medical equipment not specif ically designed for life support. ?specific?: aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support device s or systems), surgical im plantations, or healthcare intervention (e.g. excision, etc.), and any other applicati ons or purposes that pose a di rect threat to human life. 8. you should use the renesas electronics pr oducts described in this document within the range specified by renesas electronics , especially with respect to the maximum ra ting, operating supply voltage range, movement power volta ge range, heat radiation characteristics, installation and other product characteristics. renesas electronics shall have no liability for malfunctions o r damages arising out of the use of renesas electronics products beyond such specified ranges. 9. although renesas electronics endeavors to improve the quality and reliability of its produc ts, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate a nd malfunctions under certain use conditions. fur ther, renesas electronics products are not subject to radiation resistance design. please be sure to implement safety measures to guard them against the possibility of physic al injury, and injury or damage caused by fire in the event of the failure of a renesas electronics product, such as safe ty design for hardware and software in cluding but not limited to redundancy, fire control and malfunction prevention, appropri ate treatment for aging degradation or an y other appropriate measures. because the evaluation of microcomputer software alone is very difficult , please evaluate the safety of the final products or system manufactured by you. 10. please contact a renesa s electronics sales office for details as to environmental matters such as the environmental compatibility of each renesas electronics product. please use renesas electronics products in compliance with all applicable laws and regulations that regul ate the inclusion or use of c ontrolled substances, including wi thout limitation, the eu rohs directive. renesas electronics assumes no liability for damage s or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. this document may not be reproduced or duplicated, in any form, in w hole or in part, without prio r written consent of renes as electronics. 12. please contact a renesa s electronics sales office if you have any questi ons regarding the informat ion contained in this document or renesas electroni cs products, or if you have any other inquiries. (note 1) ?renesas electronics? as used in this document means renesas electronics corporation and also includes its majority- owned subsidiaries. (note 2) ?renesas electronics product(s)? means any product developed or manufactured by or for renesas electronics.
data sheet caution observe precautions when handling because these devices are sensitive to electrostatic discharge. the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec compound semiconductor devices representative for availability and additional information. npn silicon rf transistor 2SC3355 npn epitaxial silicon rf transistor for high-frequency low-noise amplification document no. pu10208ej01v0ds (1st edition) (previous no. p10355ej3v1ds00) date published april 2003 cp(k) printed in japan the mark ? ? ? ? shows major revised points. ? ? ? ? nec compound semiconductor devices 1985, 2003 description the 2SC3355 is an npn silicon epitaxial transistor designed for low noise amplifier at vhf, uhf and catv band. it has lange dynamic range and good current characteristic. features ? low noise and high gain nf = 1.1 db typ., g a = 8.0 db typ. @ v ce = 10 v, i c = 7 ma, f = 1 ghz nf = 1.8 db typ., g a = 9.0 db typ. @ v ce = 10 v, i c = 40 ma, f = 1 ghz ? high power gain : mag = 11 db typ. @ v ce = 10 v, i c = 20 ma, f = 1 ghz ordering information part number quantity supplying form 2SC3355 500 pcs (non reel) ? 18 mm wide radial taping 2SC3355-t 2.5 kpcs/box (box type) ? supplying paper tape with in a box remark to order evaluation samples, contact your nearby sales office. the unit sample quantity is 500 pcs. absolute maximum ratings (t a = +25 c) parameter symbol ratings unit collector to base voltage v cbo 20 v collector to emitter voltage v ceo 12 v emitter to base voltage v ebo 3.0 v collector current i c 100 ma total power dissipation p tot 600 mw junction temperature t j 150 c storage temperature t stg - 65 to +150 c
data sheet pu10208ej01v0ds 2 2SC3355 electrical characteristics (t a = +25 c) parameter symbol test conditions min. typ. max. unit dc characteristics collector cut-off current i cbo v cb = 10 v, i e = 0 ma C C 1.0 m a emitter cut-off current i ebo v eb = 1.0 v, i c = 0 ma C C 1.0 m a dc current gain h fe note 1 v ce = 10 v, i c = 20 ma 50 120 300 C rf characteristics gain bandwidth product f t v ce = 10 v, i c = 20 ma C 6.5 C ghz insertion power gain ? s 21e ? 2 v ce = 10 v, i c = 20 ma, f = 1 ghz C 9.5 C db noise figure (1) nf v ce = 10 v, i c = 7 ma, f = 1 ghz C 1.1 C db noise figure (2) nf v ce = 10 v, i c = 40 ma, f = 1 ghz C 1.8 3.0 db output capacitance c ob note 2 v cb = 10 v, i e = 0 ma, f = 1 mhz C 0.65 1.0 pf notes 1. pulse measurement: pw 350 m s, duty cycle 2% 2. collector to base capacitance when the emitter grounded h fe classification rank k marking k h fe value 50 to 300
data sheet pu10208ej01v0ds 3 2SC3355 typical characteristics (t a = +25 c, unless otherwise specified) dc current gain h fe collector current i c (ma) dc current gain vs. collector current 200 50 100 10 20 1510 0.5 50 v ce = 10 v 1 250 1 000 750 500 250 0 25 50 75 100 125 150 total power dissipation p tot (mw) ambient temperature t a (?c) total power dissipation vs. ambient temperature heat sink (aluminum) 19 mm 10 mm 7.8 mm 3.8 mm with heat sink free air reverse transfer capacitance c re (pf) collector to base voltage v cb (v) reverse transfer capacitance vs. collector to base voltage 2 1 0.5 0.3 0.5 0.2 1 2 5 10 30 20 f = 1 mhz v ce = 10 v gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current 10 2 5 0.2 0.5 1 0.1 1 5 10 50 0.1 0.5 100 v ce = 10 v f = 1 ghz collector current i c (ma) insertion power gain vs. collector current insertion power gain |s 21e | 2 (db) 15 10 0 5 0.5 1 10 50 570 v ce = 10 v i c = 20 ma frequency f (ghz) insertion power gain, mag vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) 25 15 20 5 10 0 0.05 0.1 0.5 1 0.2 2 mag |s 21e | 2
data sheet pu10208ej01v0ds 4 2SC3355 C90 C100 C80 C70 C60 C40 C50 C30 20 30 40 50 60 70 collector current i c (ma) im 3 , im 2 vs. collector current 3rd order intermodulation distortion im 3 (db) 2nd order intermodulation distortion im 2 (db) im 2 im 3 v ce = 10 v v o = 100 db v/50 w r g = r e = 50 w im 2 : f = 90 + 100 mhz im 3 : f = 2 200 C 190 mhz m 7 0 1 2 3 4 5 6 0.5 1 5 10 50 70 collector current i c (ma) noise figure vs. collector current noise figure nf (db) v ce = 10 v f = 1 ghz remark the graphs indicate nominal characteristics. s-parameters s-parameters/noise parameters are provided on the nec compound semiconductor devices web site in a form (s2p) that enables direct import to a microwave circuit simulator without keyboard input. click here to download s-parameters. [rf and microwave] ? [device parameters] url http://www.csd-nec.com/
data sheet pu10208ej01v0ds 5 2SC3355 smith chart 90? 0? 30? C30? 60? C60? 180? 150? C150? 120? C120? C90? 4 8 12 16 20 s 21e 0.2 ghz 2.0 ghz s 21e -frequency condition : v ce = 10 v, i c = 40 ma 00 20 30 40 50 60 70 80 90 100 110 120 130 140 150 - 160 - 150 - 140 - 130 - 120 - 110 - 100 - 90 - 80 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 10 0.22 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.21 0.19 0.17 0.15 0.13 0.11 0.09 0.07 0.05 0.03 0.02 0.01 0 0.49 0.48 0.47 0.46 0.45 0.44 0.43 0.42 0.41 0.40 0.39 0.38 0.37 0.36 0.35 0.34 0.33 0.32 0.31 0.30 0.29 0.28 0.27 0.26 0.25 0.24 0.23 0.28 0.30 0.32 0.34 0.36 0.38 0.40 0.42 0.44 0.46 0.29 0.31 0.33 0.35 0.37 0.39 0.41 0.43 0.45 0.47 0.48 0.49 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12 0.13 0.14 0.15 0.16 0.17 0.18 0.19 0.20 0.21 0.22 0.23 0.24 0.25 0.26 0.27 w a v e l e n g t h s t o w a r d l o a d a n g l e o f r e f l e c t i o n c o e f f c i e n t i n d e g r e e s w a v e l e n g t h s t o w a r d g e n e r a t o r reactance component ( r CCCC z o ) ( +jx CCCC z o ) p os i t i v e r e a c t a n c e co m p o n e n t ne g a t ive r e a c t a n c e c om p o n e n t ( - jx CCCC z o ) 0.8 0.7 0.6 0.3 0.2 0.1 0.4 0.5 5.0 10 50 3.0 4.0 1.8 2.0 1.2 1.0 0.9 1.4 1.6 20 2.0 50 10 6.0 4.0 3.0 1.8 1.6 1.4 1.2 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1.0 20 0.2 ghz 0.2 ghz 2.0 ghz 2.0 ghz i c = 20 ma s 22e s 11e i c = 20 ma i c = 40 ma i c = 40 ma 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 0.2 1.0 0.8 0.6 0.4 1.0 0.8 0.6 0.2 0.4 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.4 1.6 1.8 2.0 3.0 4.0 5.0 10 20 0 1.2 s 11e , s 22e -frequency condition : v ce = 10 v s 12e -frequency condition : v ce = 10 v, i c = 40 ma 90? 0? 30? C30? 60? C60? 180? 150? C150? 120? C120? C90? 0.1 0.2 0.3 0.4 0.5 s 12e 0.2 ghz 2.0 ghz
data sheet pu10208ej01v0ds 6 2SC3355 package dimensions to-92 (unit: mm) 5.2 max. 1.27 1 2 3 5.5 max. 4.2 max. 1.77 max. 12.7 min. 0.5 2.54 1. base eiaj : sc-43b 2. emitter jedec : to-92 3. collector iec : pa33 pin connections
data sheet pu10208ej01v0ds 7 2SC3355 m8e 00. 4 - 0110 the information in this document is current as of april, 2003. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation, nec compound semiconductor devices, ltd. and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above).
nec compound semiconductor devices hong kong limited hong kong head office taipei branch office korea branch office tel: +852-3107-7303 tel: +886-2-8712-0478 tel: +82-2-558-2120 fax: +852-3107-7309 e-mail: ncsd-hk@elhk.nec.com.hk fax: +886-2-2545-3859 fax: +82-2-558-5209 nec electronics (europe) gmbh http://www.ee.nec.de/ tel: +49-211-6503-01 fax: +49-211-6503-487 california eastern laboratories, inc. http://www.cel.com/ tel: +1-408-988-3500 fax: +1-408-988-0279 0302-1 nec compound semiconductor devices, ltd. 5th sales group, sales division tel: +81-44-435-1588 fax: +81-44-435-1579 e-mail: salesinfo@csd-nec.com for further information, please contact 2SC3355
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